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CEP1710/CEB1710 CEF1710
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP1710 CEB1710 CEF1710
VDSS 100V 100V
100V
RDS(ON) 85mΩ 85mΩ
85mΩ
ID 19A 19A 19A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
100
±20
19 76 62.5 0.5
19 d 76d 32 0.
CEB1710 Datasheet
