CEB6086
CEB6086 is N-Channel MOSFET manufactured by CET.
FEATURES
60V, 70A, RDS(ON) = 9.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 60
VGS ±20
70 ID 49
IDM 280 75
PD 0.43
EAS IAS TJ,Tstg
75.6 55 -55 to 175
Units V V A A A W
W/ C m J A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2
Units C/W C/W
Details are subject to change without notice .
Rev 1. 2010.Oct http://.cet-mos.
CEP6086/CEB6086
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics
Symbol...
