Datasheet4U Logo Datasheet4U.com

CEB6086 - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 70A@ TC=25℃.
  • Drain Source Voltage : VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEB6086 N-Channel MOSFET CET
CEB6086L N-Channel MOSFET CET
CEB6020P Single P-Channel Enhancement Mode MOSFET Chino-Excel Technology
CEB603 N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEB603 N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology

Other Datasheets by Inchange Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor CEB6086 FEATURES ·Drain Current : ID= 70A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 75 W TJ Max.