CEB6086 - N-Channel MOSFET Transistor

Datasheet Summary

Description

and solenoid drive.

Features

Drain Current : ID= 70A@ TC=25℃.
Drain Source Voltage : VDSS= 60V(Min).
Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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Datasheet Details

Part number	CEB6086
Manufacturer	Inchange Semiconductor
File Size	357.05 KB
Description	N-Channel MOSFET Transistor
Datasheet	CEB6086 Datasheet
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isc N-Channel MOSFET Transistor CEB6086 FEATURES ·Drain Current : ID= 70A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 75 W TJ Max.

Published: Jul 10, 2022 |