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CEB6086L - N-Channel MOSFET

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Features

  • 60V, 72A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S.

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Datasheet Details

Part number CEB6086L
Manufacturer CET
File Size 390.59 KB
Description N-Channel MOSFET
Datasheet download datasheet CEB6086L Datasheet
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Full PDF Text Transcription

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CEP6086L/CEB6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 72A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedz Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 72 51 Drain Current-Pulsed a IDM 288 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 75 0.
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