CEB6086L
CEB6086L is N-Channel MOSFET manufactured by CET.
FEATURES
60V, 72A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead-free plating ; Ro HS pliant. TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedz
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
72 51
Drain Current-Pulsed a
IDM 288
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
75 0.5
Single Pulsed Avalanche Energy d
EAS 132
Single Pulsed Avalanche Current d
IAS 23
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2
Units V V A A A W
W/ C m J A C
Units C/W...
