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CEB63A3 - N-Channel MOSFET

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Features

  • 30V, 66A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D CEP63A3/CEB63A3 D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S.

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Datasheet Details

Part number CEB63A3
Manufacturer CET
File Size 302.31 KB
Description N-Channel MOSFET
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N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 66A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D CEP63A3/CEB63A3 D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 66 260 75 0.
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