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CEB63A3 - N-Channel 30V MOSFET

Datasheet Summary

Features

  • TrenchFET® power MOSFET.
  • Package with low thermal resistance.
  • 100 % Rg and UIS tested D G G DS Top View S N-Channel MOSFET.

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Datasheet preview – CEB63A3

Datasheet Details

Part number CEB63A3
Manufacturer VBsemi
File Size 304.53 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet CEB63A3 Datasheet
Additional preview pages of the CEB63A3 datasheet.

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Full PDF Text Transcription

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CEB63A3-VB CEB63A3-VB Datasheet N-Channel 30 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package 30 0.006 0.008 70 Single TO-220AB/ TO-263 TO-263 FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested D G G DS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
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