CEB63A3
CEB63A3 is N-Channel 30V MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested
G DS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Continuous Source Current (Diode Conduction) a
TC = 25 °C a TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 m H
Maximum Power Dissipation b Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
VDS VGS
IS IDM IAS EAS
TJ, Tstg
LIMIT 30 ± 20 70 50 70 250 33 54 71 23
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material).
PCB Mount c
SYMBOL Rth JA Rth JC
LIMIT 50 2.1
UNIT V
A m J W °C
UNIT °C/W
CEB63A3-VB...
