CEB63A3 - N-Channel 30V MOSFET

VBsemi

Key Features

TrenchFET® power MOSFET.
Package with low thermal resistance.
100 % Rg and UIS tested D G G DS Top View S N-Channel MOSFET.

CEB63A3 n-channel 30v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	CEB63A3
Manufacturer	VBsemi
File Size	304.53 KB
Description	N-Channel 30V MOSFET
Datasheet	CEB63A3 Datasheet

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CEB63A3-VB CEB63A3-VB Datasheet N-Channel 30 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package 30 0.006 0.008 70 Single TO-220AB/ TO-263 TO-263 FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested D G G DS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.