CEB63A3 Description
CEB63A3-VB CEB63A3-VB Datasheet N-Channel 30 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package 30 0.006 0.008 70 Single TO-220AB/ TO-263 TO-263.
CEB63A3 Key Features
- TrenchFET® power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested