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CEB70N10 - N-Channel MOSFET

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Features

  • 100V, 70A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

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Datasheet Details

Part number CEB70N10
Manufacturer CET
File Size 395.01 KB
Description N-Channel MOSFET
Datasheet download datasheet CEB70N10 Datasheet
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Full PDF Text Transcription

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CEP70N10/CEB70N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 70A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS 100 VGS ±20 ID 70 48 IDM 280 136 PD 0.
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