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CEB730G - N-Channel MOSFET

Key Features

  • Type CEP730G CEB730G VDSS 400V 400V CEF730G 400V RDS(ON) 1Ω 1Ω 1Ω ID 5.5A 5.5A 5.5A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEB730G
Manufacturer CET
File Size 394.01 KB
Description N-Channel MOSFET
Datasheet download datasheet CEB730G Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP730G/CEB730G CEF730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP730G CEB730G VDSS 400V 400V CEF730G 400V RDS(ON) 1Ω 1Ω 1Ω ID 5.5A 5.5A 5.5A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 400 VGS ±30 ID 5.5 5.5 e IDM f 22 22 e 83 41 PD 0.66 0.