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CEB75N06 - N-Channel Enhancement Mode Field Effect Transistor

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Features

  • 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP75N06/CEB75N06 D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S.

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Datasheet Details

Part number CEB75N06
Manufacturer CET
File Size 320.59 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB75N06 Datasheet
Additional preview pages of the CEB75N06 datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP75N06/CEB75N06 D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 60 Units V V A A A W W/ C mJ A C ±20 87 61 348 200 1.
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