Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor Features
60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP75N06/CEB75N06
S CEB SERIES TO-263(DD-PAK)
CEP SERIES...