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CED02N7G-1/CEU02N7G-1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
Symbol VDS
VGS ID
IDM PD EAS IAS
Limit 720 750
±30
1.6
1.1 6.4 48 0.38 11.25 1.