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N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED02N7G/CEU02N7G
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 700
Units V V A A A W W/ C mJ A C
±30
1.6 1.1 6.4 48 0.
CED02N7G Datasheet
