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CED02N65G/CEU02N65G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 650
VGS ±30
ID
1.8 1.1
IDM 7.2 48
PD 0.38
EAS 11.25
IAS 1.
CED02N65G Datasheet
