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CED02N6A - N-Channel MOSFET

Datasheet Summary

Features

  • 650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

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Datasheet Details

Part number CED02N6A
Manufacturer CET
File Size 123.75 KB
Description N-Channel MOSFET
Datasheet download datasheet CED02N6A Datasheet
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Full PDF Text Transcription

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CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 650 Units V V A A W W/ C C ±30 1.3 3.9 35 0.
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