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CED02N65D - N-Channel MOSFET

Datasheet Summary

Features

  • 650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CED02N65D
Manufacturer CET
File Size 360.53 KB
Description N-Channel MOSFET
Datasheet download datasheet CED02N65D Datasheet
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Full PDF Text Transcription

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CED02N65D/CEU02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 1.8 7.2 35 0.29 Operating and Store Temperature Range TJ,Tstg -55 to 150 Avalanche Current Operating and Store Temperature Range IAS TJ,Tstg 1.
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