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CED20N06 - N-Channel MOSFET

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Features

  • 60V, 20A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

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Datasheet Details

Part number CED20N06
Manufacturer CET
File Size 124.28 KB
Description N-Channel MOSFET
Datasheet download datasheet CED20N06 Datasheet
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CED20N06/CEU20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 20A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60 Units V V A A W W/ C C ±20 20 60 60 0.
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