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CED20P10 - P-Channel MOSFET

Datasheet Summary

Features

  • -100V, -16A, RDS(ON) = 130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet preview – CED20P10

Datasheet Details

Part number CED20P10
Manufacturer CET
File Size 371.12 KB
Description P-Channel MOSFET
Datasheet download datasheet CED20P10 Datasheet
Additional preview pages of the CED20P10 datasheet.

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Full PDF Text Transcription

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CED20P10/CEU20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -16A, RDS(ON) = 130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -100 ±20 -16 -64 75 0.
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