CED41A2 Datasheet | CET

FEATURES 20V, 36A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 36 100 43 0.29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 50 Units C/W C/W Rev 1. 2005.May 6 - 62 http://.cetsemi. CED41A2/CEU41A2 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 10.7A VDS = 10V, ID = 10.7A, VGS = 4.5V VDD = 10 V, ID = 1A, VGS = 4.5V, RGEN =6Ω 20 20 72 20 15 2 3 36 1.3 40 40 130 40 20 ns ns ns ns n C n C n C A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) g FS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 10.7A VGS = 2.5V, ID = 9.1A VDS = 5V, ID = 10.7A 0.5 16 21 15 950 450 135...