• Part: CED4301
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CET
  • Size: 387.89 KB
Download CED4301 Datasheet PDF
CET
CED4301
CED4301 is P-Channel MOSFET manufactured by CET.
FEATURES -40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM -40 ±20 -20 -80 31 0.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . Rev 4. 2010.Feb http://.cet-mos. CED4301/CEU4301 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics...