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CED4301 Datasheet PDF

CET CED4301

P-Channel MOSFET

Part No. CED4301
Datasheet CED4301 Download
Manufacturer
CET
Description P-Channel MOSFET
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CED4301 datasheet page 1 preview

FEATURES

-40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S

ABSOLUTE MAXIMUM RATINGS

Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -40 ±20 -20 -80 31 0.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 4. 2010.Feb CED4301/CEU4301

ELECTRICAL CHARACTERISTICS

TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drai...
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