CED4311 Datasheet | CET

FEATURES -30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED4311/CEU4311 D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30 Units V V A A W W/ C C ±20 -33 -100 36 0.29 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 50 Units C/W C/W Specification and data are subject to change without notice . 1 Rev 2. 2010.July http://.cetsemi. Free Datasheet http://.datasheet-pdf./ CED4311/CEU4311 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -3.2A VDS = -15V, ID = -7A, VGS = -4.5V VDD = -10V, ID = -1A, VGS = -10V, RGEN = 6Ω 15 9 60 20 19 5 7 -3.2 -1.2 30 18 120 40 25 ns ns ns ns n C n C n C A V g FS Ciss Coss Crss VDS = -5V, ID = -11A VDS = -15V, VGS = 0V, f = 1.0 MHz 21 1690 285 210 S p F p F p F VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -10A VGS = -4.5V, ID = -9A...