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CED55A3 - N-Channel MOSFET

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Features

  • 25V, 38A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CED55A3
Manufacturer CET
File Size 414.03 KB
Description N-Channel MOSFET
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CED55A3/CEU55A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 38A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 25 ±20 38 152 31.25 0.
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