CET CEF02N9
N-Channel MOSFET
| Part No. | CEF02N9 |
|---|---|
| Datasheet | CEF02N9 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type CEP02N9 CEB02N9 CEF02N9 VDSS 900V 900V 900V RDS(ON) 6.8Ω 6.8Ω 6.8Ω ID 2.6A 2.6A 2.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F SABSOLUTE MAXIMUM RATINGS
Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage VDS 900 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C ID IDM e PD 2.6 1.9 10.4 125 0.83 2.6 d 1.9 d 10.4 d 47 0.3 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.2 62.5 3.2 62.5 Units V V A A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice .
