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CEF06N7 - N-Channel MOSFET

Datasheet Summary

Features

  • Type CEP06N7 CEB06N7 CEF06N7 VDSS 700V 700V 700V RDS(ON) 2Ω 2Ω 2Ω ID @VGS 6A 10V 6A 10V 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEF06N7
Manufacturer CET
File Size 372.22 KB
Description N-Channel MOSFET
Datasheet download datasheet CEF06N7 Datasheet
Additional preview pages of the CEF06N7 datasheet.

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Full PDF Text Transcription

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CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP06N7 CEB06N7 CEF06N7 VDSS 700V 700V 700V RDS(ON) 2Ω 2Ω 2Ω ID @VGS 6A 10V 6A 10V 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 700 ±30 6 4 24 150 1 6 4d 24 d 48 0.
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