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CEF07N65 - N-Channel MOSFET

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Features

  • Type CEP07N65 VDSS 650V RDS(ON) 1.3Ω ID 7A @VGS 10V CEB07N65 650V 1.3Ω 7A 10V CEF07N65 650V 1.3Ω 7A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEF07N65
Manufacturer CET
File Size 390.98 KB
Description N-Channel MOSFET
Datasheet download datasheet CEF07N65 Datasheet
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Full PDF Text Transcription

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CEP07N65/CEB07N65 CEF07N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP07N65 VDSS 650V RDS(ON) 1.3Ω ID 7A @VGS 10V CEB07N65 650V 1.3Ω 7A 10V CEF07N65 650V 1.3Ω 7A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 650 ±30 7 28 166 1.3 7d 28d 50 0.
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