Datasheet4U Logo Datasheet4U.com

CEF07N7 - N-Channel MOSFET

Datasheet Summary

Features

  • Type CEP07N7 CEB07N7 CEF07N7 VDSS 700V 700V 700V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID 6.6A 6.6A 6.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

📥 Download Datasheet

Datasheet preview – CEF07N7

Datasheet Details

Part number CEF07N7
Manufacturer CET
File Size 391.61 KB
Description N-Channel MOSFET
Datasheet download datasheet CEF07N7 Datasheet
Additional preview pages of the CEF07N7 datasheet.

📁 Similar Datasheet

  • CEF04N6 - N-Channel MOSFET (Chino-Excel Technology)
  • CEF09N6 - N-Channel MOSFET (Chino-Excel Technology)
  • CEF740A - N-Channel MOSFET (Chino-Excel Technology)
  • CEFA101 - SMD Efficient Fast Recovery Rectifier (Comchip Technology)
  • CEFA101-G - (CEFA101-G - CEFA105-G) SMD Efficient Fast Recovery Rectifier (Comchip Technology)
  • CEFA101-HF - SMD Efficiency Fast Recovery Rectifiers (Comchip)
  • CEFA102 - SMD Efficient Fast Recovery Rectifier (Comchip Technology)
  • CEFA102-G - (CEFA101-G - CEFA105-G) SMD Efficient Fast Recovery Rectifier (Comchip Technology)
  • CEFA102-HF - SMD Efficiency Fast Recovery Rectifiers (Comchip)
  • CEFA103 - SMD Efficient Fast Recovery Rectifier (Comchip Technology)
Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CEP07N7/CEB07N7 CEF07N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP07N7 CEB07N7 CEF07N7 VDSS 700V 700V 700V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID 6.6A 6.6A 6.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 700 ±30 6.6 26.4 166 1.3 6.6d 26.4d 50 0.4 Repetitive Avalanche Energy EAR 3.
Published: |