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CEF08N8 - N-Channel MOSFET

Key Features

  • Type CEP08N8 CEB08N8 CEF08N8 VDSS 800V RDS(ON) 1.55Ω ID 8A @VGS 10V 800V 1.55Ω 8A 10V 800V 1.55Ω 8A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEF08N8
Manufacturer CET
File Size 431.97 KB
Description N-Channel MOSFET
Datasheet download datasheet CEF08N8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP08N8/CEB08N8 CEF08N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP08N8 CEB08N8 CEF08N8 VDSS 800V RDS(ON) 1.55Ω ID 8A @VGS 10V 800V 1.55Ω 8A 10V 800V 1.55Ω 8A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 800 VGS ±30 ID IDM e 8 5 32 208 PD 1.7 TO-220F 8d 5d 32d 52 0.