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CEF1186 - N-Channel MOSFET

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Features

  • Type CEP1186 CEB1186 CEF1186 VDSS 800V RDS(ON) 2.3Ω ID 6A @VGS 10V 800V 2.3Ω 6A 10V 800V 2.3Ω 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEF1186
Manufacturer CET
File Size 392.93 KB
Description N-Channel MOSFET
Datasheet download datasheet CEF1186 Datasheet
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Full PDF Text Transcription

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CEP1186/CEB1186 CEF1186 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1186 CEB1186 CEF1186 VDSS 800V RDS(ON) 2.3Ω ID 6A @VGS 10V 800V 2.3Ω 6A 10V 800V 2.3Ω 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS VGS ID IDM e PD 800 ±30 6 24 166 1.3 EAS 9.4 IAS 2.
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