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CEF12N5S - N-Channel MOSFET

Datasheet Summary

Features

  • Type CEF12N5S VDSS 500V RDS(ON) 0.54Ω ID 12Ad @VGS 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D S CEF SERIES TO-220F G S.

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Datasheet Details

Part number CEF12N5S
Manufacturer CET
File Size 582.29 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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CEF12N5S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF12N5S VDSS 500V RDS(ON) 0.54Ω ID 12Ad @VGS 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Symbol VDS VGS ID IDM e PD TJ,Tstg Limit 500 ±30 12 d 48d 50 0.4 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
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