Datasheet Summary
Dual Enhancement Mode Field Effect Transistor (N Channel)
PRELIMINARY
Features
20V, 3.8A, RDS(ON) = 50mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS pliant.
Surface mount Package.
4 5 6
3 2 1 TSOP-6
G1(1)
D1(6)
G2(3) S1(5)
D2(4)...