CEH2609 Overview
CEH2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel).
CEH2609 Key Features
- 20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V
| Part number | CEH2609 |
|---|---|
| Datasheet | CEH2609-CET.pdf |
| File Size | 597.96 KB |
| Manufacturer | CET |
| Description | Dual Enhancement Mode Field Effect Transistor |
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CEH2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel).
| Part Number | Description |
|---|---|
| CEH2608 | Dual MOSFET |
| CEH2288 | N-Channel MOSFET |
| CEH2305 | P-Channel Enhancement Mode Field Effect Transistor |
| CEH2307 | P-Channel MOSFET |
| CEH2310 | N-Channel Enhancement Mode Field Effect Transistor |
| CEH2311 | P-Channel Enhancement Mode Field Effect Transistor |
| CEH2312 | N-Channel MOSFET |
| CEH2313 | P-Channel Enhancement Mode Field Effect Transistor |
| CEH2316 | N-Channel Enhancement Mode Field Effect Transistor |
| CEH2321 | P-Channel Enhancement Mode Field Effect Transistor |