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CEH2307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -4A , RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. Lead free product is acquired. TSOP-6 package.
4 5 6
3 2 1 TSOP-6
G(3)
D(1,2,5,6,) S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -4 IDM -16
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 2.
CEH2307 Datasheet
