Datasheet Summary
P-Channel Enhancement Mode Field Effect Transistor
Features
-30V, -4A , RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. Lead free product is acquired. TSOP-6 package.
4 5 6
3 2 1 TSOP-6
G(3)
D(1,2,5,6,)...