Datasheet Summary
P-Channel Enhancement Mode Field Effect Transistor Features
-20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V.
RDS(ON) = 130mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3)...