CET CEH2313
P-Channel Enhancement Mode Field Effect Transistor
| Part No. | CEH2313 |
|---|---|
| Datasheet | CEH2313 Download |
| Manufacturer |  CET |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
-30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,)ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -4.6 -18.4 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W Rev 1. 2005.October 1 CEH2313ELECTRICAL CHARACTERISTICS
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteri...
