Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
Features
20V, 6.2A , RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 45mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. Lead free product is acquired. TSOP-6 package.
4 5 6
3 2 1
TSOP-6
G(3)
D(1,2,5,6,)...