CEH2310 - N-Channel Enhancement Mode Field Effect Transistor

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CET

Part number	CEH2310
Manufacturer	CET
File Size	112.68 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	CEH2310 Datasheet
Additional preview pages of the CEH2310 datasheet.

30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 5 6 3 2 1 TSOP-6 S(4) G(3) 4 D(1,2,5,6,).

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Published: Mar 5, 2012 |