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CEH2288 - N-Channel MOSFET

Datasheet Summary

Features

  • 20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 G1(6) D1(2) G2(4) S1(1) D2(5) S2(3).

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Datasheet Details

Part number CEH2288
Manufacturer CET
File Size 531.69 KB
Description N-Channel MOSFET
Datasheet download datasheet CEH2288 Datasheet
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CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 G1(6) D1(2) G2(4) S1(1) D2(5) S2(3) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 5.2 IDM 20 Maximum Power Dissipation PD 1.
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