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CEM3053 - P-Channel MOSFET

Key Features

  • -30V, -15A, RDS(ON) = 7mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

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Datasheet Details

Part number CEM3053
Manufacturer CET
File Size 429.84 KB
Description P-Channel MOSFET
Datasheet download datasheet CEM3053 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS(ON) = 7mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -15 IDM -60 Maximum Power Dissipation PD 2.