Datasheet Summary
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
Features
-30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
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