Datasheet Summary
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
30V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 D1 D2 D2 876 5
SO-8
123 4 S1 G1 S2...
