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CEM4804 - Dual N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEM4804, a member of the CEM4804_Chino Dual N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 30V , 7.9A , RDS(ON)=20mΩ @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. 1 2 3 4 D1 8 D1 7 D2 6 D2 5 SO-8 1 S1 G1 S2 G2.

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Datasheet preview – CEM4804

Datasheet Details

Part number CEM4804
Manufacturer Chino-Excel Technology
File Size 106.35 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM4804 Datasheet
Additional preview pages of the CEM4804 datasheet.

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Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) CEM4804 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 7.9A , RDS(ON)=20mΩ @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. 1 2 3 4 D1 8 D1 7 D2 6 D2 5 SO-8 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W C Ć20 Ć7.9 Ć24 2 2 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RįJA 62.
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