Datasheet Summary
( DataSheet : .. )
PRELIMINARY
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
30V , 7.9A , RDS(ON)=20mΩ @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package.
1 2 3 4
D1
D1
D2
D2
SO-8 1
S1
G1...
