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CEM6080 - Dual Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • 60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 5 SO-8 1 1 S1 2 G1 3 S2 4 G2.

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Datasheet Details

Part number CEM6080
Manufacturer CET
File Size 461.20 KB
Description Dual Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM6080 Datasheet
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Full PDF Text Transcription

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CEM6080 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 60 P-Channel -60 Units V V A A W C ±20 5.6 23 2.0 -55 to 150 ±20 -3.
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