CEM6601 Description
P-Channel Enhancement Mode Field Effect Transistor.
CEM6601 Key Features
- 60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS
| Part number | CEM6601 |
|---|---|
| Download | CEM6601 Datasheet (PDF) |
| File Size | 344.80 KB |
| Manufacturer | CET |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
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| Part Number | Description |
|---|---|
| CEM6607 | Dual P-Channel Enhancement Mode Field Effect Transistor |
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| CEM6080 | Dual Enhancement Mode Field Effect Transistor |
| CEM6338 | Dual N-Channel MOSFET |
P-Channel Enhancement Mode Field Effect Transistor.