CET CEM6607
Dual P-Channel Enhancement Mode Field Effect Transistor
| Part No. | CEM6607 |
|---|---|
| Datasheet | CEM6607 Download |
| Manufacturer |  CET |
| Description | Dual P-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
-60V, -3.8A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 CEM6607 5 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -3.8 -15 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W Details are subject to change without notice . 1 Rev 2. 2006.Oct CEM6607ELECTRICAL CHARACTERISTICS
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Th...
