CEM6607 Overview
Dual P-Channel Enhancement Mode Field Effect Transistor.
CEM6607 Key Features
- 60V, -3.8A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS
| Part number | CEM6607 |
|---|---|
| Datasheet | CEM6607_CET.pdf |
| File Size | 342.42 KB |
| Manufacturer | CET |
| Description | Dual P-Channel Enhancement Mode Field Effect Transistor |
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Dual P-Channel Enhancement Mode Field Effect Transistor.
| Part Number | Description |
|---|---|
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| CEM6659 | Dual Enhancement Mode Field Effect Transistor |
| CEM6056L | N-Channel Enhancement Mode Field Effect Transistor |
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| CEM6355 | p- |
| CEM6405 | P-Channel Enhancement Mode Field Effect Transistor |
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