CEM6607 Description
Dual P-Channel Enhancement Mode Field Effect Transistor.
CEM6607 Key Features
- 60V, -3.8A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS
CEM6607 Datasheet
| Part number | CEM6607 |
|---|---|
| Download | CEM6607 Datasheet (PDF) |
| File Size | 342.42 KB |
| Manufacturer | CET |
| Description | Dual P-Channel Enhancement Mode Field Effect Transistor |
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