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CEM6659 - Dual Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 5.

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Datasheet Details

Part number CEM6659
Manufacturer CET
File Size 306.51 KB
Description Dual Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM6659 Datasheet
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Full PDF Text Transcription

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CEM6659 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 5 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 60 VGS ±20 ID 4.1 IDM 15 P-Channel -60 ±20 -3.1 -12 Maximum Power Dissipation PD 2.
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