CET CEM6867
Dual P-Channel MOSFET
| Part No. | CEM6867 |
|---|---|
| Datasheet | CEM6867 Download |
| Manufacturer |  CET |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
-60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -3.1 IDM -12 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2. 2011.Mar CEM6867ELECTRICAL CHARACTERISTICS
Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Chara...
