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CEN2301 - P-Channel MOSFET

Datasheet Summary

Features

  • -20V, -2.7A, RDS(ON) = 110mΩ @VGS = -4.5V. RDS(ON) = 160mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23-T package. D DS G SOT-23-T G S.

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Datasheet Details

Part number CEN2301
Manufacturer CET
File Size 378.56 KB
Description P-Channel MOSFET
Datasheet download datasheet CEN2301 Datasheet
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CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.7A, RDS(ON) = 110mΩ @VGS = -4.5V. RDS(ON) = 160mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23-T package. D DS G SOT-23-T G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -2.7 IDM -10.8 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2. 2013.July.
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