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CEN7002A - N-Channel MOSFET

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Features

  • 60V, 0.25A, RDS(ON) = 3 Ω @VGS = 10V. RDS(ON) = 4 Ω @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23-T package. D CEN7002A SOT-23-T Die upside up package. DS G SOT-23-T G S.

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Datasheet Details

Part number CEN7002A
Manufacturer CET
File Size 82.99 KB
Description N-Channel MOSFET
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CEN7002A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 0.25A, RDS(ON) = 3 Ω @VGS = 10V. RDS(ON) = 4 Ω @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23-T package. D CEN7002A SOT-23-T Die upside up package. DS G SOT-23-T G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 60 VGS ±20 ID 0.25 IDM 1.3 Maximum Power Dissipation PD 0.35 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 350 Units C/W 2004.December 7 - 30 http://www.cetsemi.
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