CEP3205 Datasheet | CET

FEATURES 55V, 108.5A, RDS(ON) = 8.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP3205/CEB3205 PRELIMINARY S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 55 Units V V A A W W/ C C ±20 108.5 434 200 1.3 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.Feb http://.cetsemi. .. CEP3205/CEB3205 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 64A VDS = 44V, ID = 62A, VGS = 10V VDD = 28V, ID = 62A, VGS = 10V, RGEN = 4.5Ω 27 14 56 18 75.2 22.9 20.3 108 1.3 54 28 112 36 100 ns ns ns ns n C n C n C A V g FS Ciss Coss Crss VDS = 25V, ID = 64A VDS = 25V, VGS = 0V, f = 1.0 MHz 30 2940 1030 30 S p F p F p F VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 64A 2 6.5 4 8.5 V mΩ BVDSS...