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CEP30N3 - N-Channel Enhancement Mode Field Effect Transistor

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Features

  • Type CEP30N3 CEB30N3 CEF30N3 VDSS 300V 300V 300V RDS(ON) 110mΩ 110mΩ 110mΩ ID 30A 30A 30A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP30N3
Manufacturer CET
File Size 378.44 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP30N3 CEB30N3 CEF30N3 VDSS 300V 300V 300V RDS(ON) 110mΩ 110mΩ 110mΩ ID 30A 30A 30A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
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