30V, 47A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 package. G D S
CEP SERIES TO-220
D
G S.
Full PDF Text Transcription for CEP3100 (Reference)
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CEP3100 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 47A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. Super high dense cell desi...
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2mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 package. G D S CEP SERIES TO-220 D G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 47 33 188 48 0.
CEP3100 Datasheet
