CEP3120 Datasheet | CET

FEATURES 30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 40 160 43 0.29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 62.5 Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2006.Sep http://.cetsemi. CEP3120/CEB3120 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 40A VDS = 15V, ID = 40A, VGS = 10V VDD = 15V, ID = 10A, VGS = 10V, RGEN = 0.3Ω 13 3.4 30 6.8 13.1 2.7 1 40 1.3 26 6.8 60 13.6 17.4 ns ns ns ns n C n C n C A V Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 955 155 75 p F p F p F VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 40A VGS = 4.5V, ID =32A 1 11 17 3 15 22 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 30 1 100 -100...